Journal Papers

D. M. Fryauf, A. C. Phillips, N. P. Kobayashi, “Corrosion barriers for silver-based telescope mirrors: comparative study of plasma-enhanced atomic layer deposition and reactive evaporation of aluminum oxide”, Journal of Astronomical Telescopes, Instruments, and Systems 1, 044002 (2015).

J. Zhang, D. M. Fryauf, M. Garrett, VJ Logeeswaran, A. Sawabe, M. S. Islam, N. P. Kobayashi, “Phenomenological model of the growth of ultrasmooth silver thin films deposited with a germanium nucleation layer”, Langmuir 31, 7852 (2015). 

J. Zhang, M. Wei, D. M .Fryauf, J. J. Diaz Leon, K. J. Norris, H. Deng, N. P. Kobayashi, “Single-crystal indium phosphide nanowires grown on polycrystalline copper foils with an aluminum-doped zinc oxide template”, Journal of Materials Science 50, 4926 (2015).

D. M. Fryauf, K. J. Norris, J. Zhang, S.-Y. Wang, N. P. Kobayashi, “Titanium oxide vertical resistive random-access memory device”, Micro & Nano Letters 10, 321 (2015).

J. J. Diaz Leon, M. P. Garrett, J. Zhang, N. P. Kobayashi, “Aluminum titanium oxide alloys: Deposition of amorphous, transparent, corrosion-resistant films by pulsed DC reactive magnetron sputtering with RF substrate bias”, Materials Science in Semiconductor Processing 36, 96 (2015).

K. J. Norris, M. P. Garrett, J. Zhang, E. Coleman, G. S. Tompa, N. P. Kobayashi, “Silicon nanowire networks for multi-stage thermoelectric modules”, Energy Conversion and Management 96, 100 (2015).

S. Ali, J. Bae, K. Hyun, C. H. Lee, Y. H. Doh, S. Shin, N. P. Kobayashi, “Organic non-volatile memory cell based on resistive elements through electro-hydrodynamic technique”, Organic Electronics, 17, 121 (2015).

K. J. Norris, M. Garrett, E. Coleman, G. S. Tompa, J. Zhang, N. P. Kobayashi, “Graphene mediated growth of polycrystalline indium phosphide nanowires and monocrystalline-core, polycrystalline-shell silicon nanowires on copper”, Journal of Crystal Growth 406, 41 (2014).

J. Zhang, D. M. Fryauf, K. J. Norris, M. Wei, J. J. Diaz Leon, N. P. Kobayashi, “Raman spectroscopy of indium phosphide nanowire networks coated with gold clusters”, Journal of Materials Science: Materials in Electronics 25, 4867 (2014).

M. Wei, J. Zhang, D. M. Fryauf, J. J. Diaz Leon, K. J. Norris, H. Deng, G. Wen, S.-Y. Wang, N. P. Kobayashi, “Growth and characterization of indium phosphide nanowires on transparent conductive ZnO: Al films", Journal of Materials Science: Materials in Electronics, 25, 4444 (2014).

D. M. Fryauf, J. Zhang, K. J. Norris, J. J. Diaz Leon, M. Oye, M. Wei, N. P. Kobayashi, "Photoluminescence blue shift of indium phosphide nanowire networks with aluminum oxide coating", Physica Status Solidi 8, 663 (2014).

K. J. Norris, J. Zhang, D. M. Fryauf, G. A. Gibson, S. J. Barcelo, N. P. Kobayashi, "Nanoimprint lithography based selective area growth of indium phosphide nanopillar arrays on non-single-crystal templates", Journal of Crystal Growth 386, 107 (2014).

B. J. Choi, A. C. Torrezan, K. J. Norris, F. Miao, J. P. Strachan, M. -X. Zhang, D. A. A. Ohlberg, N. P. Kobayashi, J. J. Yang, R. S. Williams, "Electrical Performance and Scalability of Pt Dispersed SiO2 Nanometallic Resistance Switch", Nano Letters 13, 3213 (2013).

L. Dugaiczyk, T.-T.t Ngo-Duc, J. Gacusan, K. Singh, J. Yang, S. Santhanam, J.-W. Han, J. E. Koehne, N. P. Kobayashi, M. Meyyappan, M. M. Oye, “Resistive switching in single vertically-aligned ZnO nanowire grown directly on Cu substrate”, Chemical Physics Letters 575, 112 (2013).

T.-T. Nago-Duc, J. Gacusan, N. P. Kobayashi, M. Sanghadasa, M. Meyyappan, M. M. Oye, "Controlled growth of vertical ZnO nanowires on copper substrate", Appl. Phys. Lett. 102, 083105 (2013).

A. J. Lohn, R. D. Cormia, D. M. Fryauf, J. Zhang, K. J. Norris, N. P. Kobayashi, "Morphological effect of doping environment on silicon nanowires grown by plasma-assisted chemical vapor deposition", Japanese Journal of Applied Physics 51, 11PE04-1 (2012).

J.-W. Han, B. Kim, N. P. Kobayashi, J. Li, M. Meyyappan, "A simple method for the determination of doping type in nanomaterials based on electrical response to humidity", Applied Physics Letters, 101, 142110 (2012).

B. J. Choi, J. J. Yang, M. -X. Zhang, K. J. Norris, D. A. A. Ohlberg, N. P. Kobayashi, G. Medeiros-Ribeiro, R. S. Williams, "Nitride memristors", Applied Physics A 109, 1 (2012).

K. J. Norris, V. K. Wong, T. Onishi, A. J. Lohn, E. Coleman, G. S. Tompa, N. P. Kobayashi, "Reflection Absorption Infrared Spectroscopy Analysis of the Evolution of ErSb on InSb", Surface Science 606, 1556 (2012).

K. J. Norris, A. J. Lohn, T. Onishi, E. Coleman, V. Wong, A. Shakouri, G. S. Tompa, N. P. Kobayashi, "MOCVD Growth of Erbium Monoantimonide Thin Film and Nanocomposites for Thermoelectrics", J. Electronic Materials 41, 971 (2012).

A. J. Lohn, N. P. Kobayashi, "AC surface photovoltage of indium phosphide nanowire networks", Applied Physics A 107, 647 (2012).

A. J. Lohn, E. Coleman, G. S. Tompa, N. P. Kobayashi, "Assessment on thermoelectric power factor in silicon nanowire netoworks", Physica Status Solidi (a), 209, 171 (2012) One of the most accessed papers in Physica Status Solidi for March 2012.

J. -W. Han, A. Lohn, N. P. Kobayashi, M. Meyyappan, “Evolutional Transformation of Copper Oxide Nanowires to Copper Nanowires by a Reduction Technique “, Materials Express 1, 176 (2011).

Logeeswaran VJ, J. Oh, A. P. Nayak, A. M. Katzenmeyer, K. H. Gilchrist, S. Grego, N. P. Kobayashi, S.-Y. Wang, A. A. Talin, N. K. Dhar, M. S. Islam, “A Perspective on Nanowire Photodetectors: Current Status, Future Challenges, and Opportunities”, IEEE Journal of Selected Topics in Quantum Electronics, 17, 1002 (2011).

J. J. Yang, N. P. Kobayashi, J. P. Strachant, M.-X. Zhang, D. A. A. Ohlberg, M. D. Pickett, Z. Li, G. Medeiros-Ribeiro, R. S. Williams, “Dopant Control by Atomic Layer Deposition in Oxide Films for Memristive Switches”,  Chemistry of Materials 23, 123 (2011) .

T. Yamada, H. Yamada, A. J. Lohn, N. P. Kobayashi, “Room-temperature Coulomb staircase in semiconducting InP nanowires modulated with light illumination”, Nanotechnology 22, 055201 (2011).

A. J. Lohn, X. Li, N. P. Kobayashi, “Epitaxial growth of ensembles of indium phosphide nanowires on various non-single crystal substrates using an amorphous template layer”, Journal of Crystal Growth 315, 157 (2011).

A. J. Lohn, T. Onishi, N. P. Kobayashi, “Optical properties of indium phosphide nanowire ensembles at various temperatures”, Nanotechnology, 21, 355702 (2010).

N. P. Kobayashi, S. Mathai, X. Li, V. J. Logeeswaran, M. S. Islam, A. Lohn, T. Onishi, J. Straznicky, S.-Y. Wang, R. S. Williams, “Ensembles of indium phosphide nanowires: physical properties and functional devices integrated on non-single crystal platforms”, Appl. Phys. A 95, 1005 (2009).

N. Mingo, D. Hauser, N. P. Kobayashi, M. Plissonnier, and A. Shakouri, ““Nanoparticle-in-Alloy” Approach to efficient thermoelectrics: Silicides in SiGe,” Nano Lett. 9, 711 (2009).

Logeeswaran VJ, N. P. Kobayashi, M. S. Islam, W. Wu, P. Chaturvedi, N. X. Fang, S.-Y. Wang, R. S. Williams, “Ultrasmooth silver thin films deposited with a germanium nucleation layer”, Nano Lett. 9, 178 (2009).

N. P. Kobayashi, R. S. Williams, “Two-stage atomic layer deposition of aluminum oxide on alkanethiolate self-assembled monolayers using n-propanol and water as oxygen sources”, Chem. Mater. 20, 5356 (2008).

N. P. Kobayashi, R. S. Williams, “Two-stage Atomic Layer Deposition of Smooth Aluminum Oxide on Hydrophobic Self-assembled Monolayers”, Eng. Lett. 16_2_07 (2008).

N. P. Kobayashi, “Nanometer-scale photonic passive and active components for future communications”, J. Nanophotonics 2, 021765 (2008).

Logeeswaran VJ, A. Sarkar, M. S. Islam, N. P. Kobayashi, J. Straznicky, X. Li, W. Wu, S. Mathai, M. R. T.  Tan, S.-Y. Wang, R. S. Williams, “A 14-ps full width at half maximum high-speed photoconductor fabricated with intersecting InP nanowires on an amorphous surface”, Appl. Phys. A91, 1 (2008).

N. P. Kobayashi, S.-Y. Wang, C. Santori, R. S. Williams, “Indium phosphide nanoneedles on non-single crystalline semiconductor surfaces”, Jap. J. Appl. Phys. 46, 6346 (2007).

N. P. Kobayashi, Logeeswaran VJ, M. S. Islam, X. Li, J. Straznicky, S.-Y. Wang, R. S. Williams, Y. Chen, “Hydrogenated microcrystalline silicon electrodes connected by indium phosphide nanowires,” Appl. Phys. Lett. 91, 113116 (2007).

Linus C. Chuang, Michael Moewe, Chris Chase, N. P. Kobayashi, Connie Chang-Hasnain, Shanna Crankshaw, “Critical diameter for III-V nanowires grown on lattice-mismatched substrates”, Appl. Phys. Lett. 90, 043115 (2007).

N. P. Kobayashi, C. L. Donley, S.-Y. Wang, R. S. Williams, “Atomic layer deposition of aluminum oxide on hydrophilic and hydrophobic surfaces”, J. Crystal Growth, 299, 218 (2007).

N. P. Kobayashi, S.-Y. Wang, C. Santori, R. S. Williams, “Growth and characterization of indium phosphide single-crystal nanoneedles on microcrystalline silicon surfaces”, Appl. Phys. A85, 1 (2006).

Y. Ominami, Q. Ngo, N. P. Kobayashi, K. Mcilwrath, K. Jarausch, A. M. Cassell, J. Li, C. Y. Yang, “Bottom-up sample preparation technique for interfacial characterization of vertically aligned carbon nanofibers”, Ultramicroscopy 106, 597 (2006).

A. A. Yasseri, N. P. Kobayashi, Theodor I. Kamins, “Formation and characterization of long-chained alkylsiloxane self-assembled monolayers on atomic-layer-deposited aluminum oxide surfaces”, Appl. Phys. A84, 1 (2006).

X. Zhang, P. D. Dapkus, D. H. Rich, I. Kim, J. T. Kobayashi, N. P. Kobayashi, “InGaN/GaN quantum well growth on pyramids of epitaxial lateral overgrown GaN”, J. of Electron. Mater. 29, 10 (2000).

N. P. Kobayashi, J. T. Kobayashi, P. D. Dapkus, “Epitaxial lateral overgrowth of GaN over AlO_x surface formed on Si substrate”, Appl. Phys. Lett. 74, 2836 (1999).

X. Zhang, D. H. Rich, J. T. Kobayashi, N. P. Kobayashi, P. D. Dapkus, “Carrier relaxation and recombination in an InGaN/GaN quantum well proved with time-resolved cathodoluminescence”, Appl. Phys. Lett. 73, 1430 (1998).

N. P. Kobayashi, J. T. Kobayashi, W.-J. Choi, and P. D. Dapkus, “Single crystal -GaN growth on a a-Ga₂O₃ template layer”, Appl. Phys. Lett. 73, 1553 (1998).

J. T. Kobayashi, N. P. Kobayashi, X. Zhang, P. D. Dapkus, D. H. Rich, “Structural and optical emission characteristics of thin InGaN layers grown on GaN and the implications for growing high quality quantum wells by MOCVD”, J. Crystal Growth 195, 252 (1998).

N. P. Kobayashi, J. T. Kobayashi, P. D. Dapkus, W-J Choi, X. Zhang, D. H. Rich, “Epitaxial growth of GaN on Si substrate using oxidized AlAs as an intermediate layer”, J. of Crystal Growth 189/190, 172 (1998).

N. P. Kobayashi, J. T. Kobayashi, P. D. Dapkus, W-J Choi, A. E. Bond, X. Zhang, D. H. Rich, “GaN growth on Si(111) substrate using oxidized AlAs as an intermediate layer”, Appl. Phys. Lett. 71, 3569 (1997).

J. T. Kobayashi, N. P. Kobayashi, P. D. Dapkus, “Nucleation and growth behavior for GaN grown on (0001) sapphire via multistep growth approach”, J. of Electron. Mater. 26, 1114 (1997).

T. R. Ramachandran, R. Heitz, N. P. Kobayashi, A. Kalburge, W. Yu, P. Chen, A. Madhukar, “Re-entrant behavior of 2D to 3D morphology change and 3D island lateral size equalization via mass exchange in Stranski-Krastanow growth: InAs on GaAs(001)”, J. Cryst. Growth 175/176, 216 (1997).

N. P. Kobayashi, T. R. Ramachandran, P. Chen, A. Madhukar, “In situ, atomic force microscope studies of the evolution of InAs three-dimensional islands on GaAs(001)”, Appl. Phys. Lett. 68, 3299 (1996).

Q. Xie, N. P. Kobayashi, T. R. Ramachandran, A. Kalburge, P. Chen, A. Madhukar, “Strained coherent InAs quantum box islands on GaAs(100): size equalization, vertical self-organization, and optical properties”, J. Vac. Sci. Technol. B 14, 2203 (1996).

Q. Xie, A. Madhukar, P. Chen, N. P. Kobayashi, “Vertically self-organized InAs quantum box islands on GaAs(100)”, Phys. Rev. Lett. 75, 2542 (1995).